CEP09N6

CEP09N6/CEB09N6 CEI09N6/CEF09N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 600 ±30 9 35 156 1.25 500 9 -55 to 150 9 e e A A W W/ C mJ A C 35 50 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range 0.38 500 9 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.8 62.5 Limit 2.6 65 Units C/W C/W 2002.July 4 - 34 http://www.cetsemi.com CEP09N6/CEB09N6 CEI09N6/CEF09N6 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Thre...