Document
FJE5304D NPN Triple Diffused Planar Silicon Transistor
FJE5304D
NPN Triple Diffused Planar Silicon Transistor
High Voltage High Speed Power Switch Application
• Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time
Equivalent Circuit C
B
1
TO-126 2.Collector 3.Base
E
1.Emitter
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP IB IBP PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse)
TC = 25°C unless otherwise noted
Parameter
Value
700 400 12 4 8 2 4 30 - 65 ~ 150
Units
V V V A A A A W °C
Collector Dissipation (TC=25°C) Storage Temperature
* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%
Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICES ICEO IEBO hFE
C=
25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Test Condition
IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCE = 700V, VEB = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 2A
Min.
700 400 12
Typ.
Max.
Units
V V V
100 250 100 10 8 40
µA µA µA
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FJE5304D Rev. B1
FJE5304D NPN Triple Diffused Planar Silicon Transistor
Electrical Characteristics (Continued) T
Symbol
VCE(sat)
C=
25°C unless otherwise noted
Parameter
Collector-Emitter Saturation Voltage
Test Condition
IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IF = 2A IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200µH IC = 2A, IB1 = IB2 = 0.4A TP = 30µs
Min.
Typ.
Max.
0.7 1.0 1.5 1.1 1.2 1.3 2.5
Units
V
VBE(sat)
Base-Emitter Saturation Voltage
V
Vf tstg tf
Internal Diode Forward Voltage Drop Storage Time Fall Time
V µs
Inductive Load Switching (VCC = 200V) 0.6 0.1
Resistive Load Switching (VCC = 250V) tstg tf Storage Time Fall Time 2.9 0.2 µs
* Pulse test: PW ≤ 300µs, Duty cycle ≤ 2%
Thermal Characteristics
Symbol
RθJC RθJA
TC = 25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max.
4.17 83.3
Units
°C/W °C/W
Package Marking and Ordering Information
Device Marking
FJE5304D
Device
FJE5304D
Package
TO-126
Reel Size
--
Tape Width
--
Quantity
--
FJE5304D Rev. B1
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FJE5304D NPN Triple Diffused Planar Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
5
Figure 2. DC Current Gain
100
IC[A], COLLECTOR CURRENT
4
hFE,DC CURRENT GAIN
3
IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA
Vce=5V
Ta=125 C 25 C
o o
-25 C
10
o
2
1
0
IB = 0
0 1 2 3 4 5 6 7 8 9 10
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
Figure 4. Base-Emitter Saturation Voltage
10
VCE(sat)[V],SATURATION VOLTAGE
Ic=5IB
25 C
O
1
VBE[V],SATURATION VOLTAGE
Ic=5IB
Ta=125 C -25 C
0.1
O
O
1
-25 C 25 C Ta=125 C
O O
O
0.01 0.01
0.1
1
10
0.1 0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Resitive Load Switching Time
10
Figure 6. Inductive Load Switching Time
1000
VCC = 250V IC = 5IB1 = -5IB2
tSTG tSTG
1
tSTG, tF [ns], TIME
tSTG, tF [µs], TIME
100
0.1
tF
tF
0.01 0.1
1
10
10 0.1
VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1
1 10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
FJE5304D Rev. B1
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FJE5304D NPN Triple Diffused Planar Silicon Transistor
Typical Performance Characteristics
Figure 7. Forward Bias Safe Operating Area
100
Figure 8. Reverse Bias Safe Operating Area
100
TC=25 C
o
IC[A], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
Vcc=50V, IB1=1A, IB2 = -1A L = 1mH
10
1µs 10µs
1
1ms
DC
1
0.1
0.1
0.01
10
100
1000
0.01 10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
50
PC[W], POWER DISSIPATION
40
30
20
10
0
0
25
50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
FJE5304D Rev. B1
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FJE5304D NPN Triple Diffused Planar Silicon Transistor
Mechanical Dimensions
TO-126
±0.10
3.90
8.00 ±0.30
3.25 ±0.20
14.20MAX
ø3.20 ±0.10
11.00
±0.20
(1.00) 0.75 ±0.10 1.60 ±0.10
±0.30
(0.50) 1.75 ±0.20
0.75 ±0.10
#1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20]
13.06
16.10
±0.20
0.50 –0.05
+0.10
Dimensions in Millimeters
FJE5304D Rev. B1
5
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FJE5304D NPN Triple Diffused Planar Silicon Transistor
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