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FGD3N60LSD

Fairchild Semiconductor
Part Number FGD3N60LSD
Manufacturer Fairchild Semiconductor
Description IGBT
Published May 6, 2007
Detailed Description FGD3N60LSD IGBT September 2006 FGD3N60LSD IGBT Features • High Current Capability • Very Low Saturation Voltage : VCE(...
Datasheet PDF File FGD3N60LSD PDF File

FGD3N60LSD
FGD3N60LSD

Overview
FGD3N60LSD IGBT September 2006 FGD3N60LSD IGBT Features • High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.
2 V @ IC = 3A • High Input Impedance tm Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses.
The device is designed for applications where very low On-Voltage Drop is a required feature.
Applications • HID Lamp Applications • Piezo Fuel Injection Applications C C G G E D-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max.
junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current C...


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