P-Channel Enhancement Mode Field Effect Transistor
Description
CEM6861
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -3.5A, RDS(ON) = 125mΩ @VGS = -10V. RDS(ON) = 169mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATIN...