Document
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-40V, -4.6A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8
CEM4481
D 7
D 6
D 5
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -40 Units V V A A W C
±20
-4.6 -18 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
Details are subject to change without notice . 1
Rev 2. 2007.Jan http://www.cetsemi.com
CEM4481
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.3A VDS = -20V, ID = -4.2A, VGS = -4.5V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 12 2 30 4 5.3 1.9 2.1 -4.6 -1.2 25 4 60 8 7 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -4.6A VGS = -4.5V, ID = -3.7A VDS = -5V, ID = -4.6A VDS = -20V, VGS = 0V, f = 1.0 MHz -1 55 85 7 700 120 70 Min -40 -1 100 -100 -3 66 105 Typ Max Units V
µA
5
nA nA V mΩ mΩ S pF pF pF
Forward Transconductance
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEM4481
25 10 -VGS=10,8V
-ID, Drain Current (A)
-VGS=5.0V
15 10 5 0
-ID, Drain Current (A)
20
8 6 4 25 C 2 TJ=125 C -55 C 2 3 4 5 0
-VGS=4.0V
0
0.5
1
1.5
2
2.5
0
1
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
900 750 600 450 300 150 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=-4.6A VGS=-10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.