CEM4269
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V, -5.2A, RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount ...
