Document
CEM2082
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
D D 7 D 6 D 5
5
Lead free product is acquired. Surface mount Package.
8
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C
±12
11 40 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
Specification and data are subject to change without notice . 1
Rev 1. 2006.January http://www.cetsemi.com
CEM2082
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2.3A VDS = 15V, ID = 10A, VGS = 5V VDD = 15V, ID = 10A, VGS = 5V, RGEN = 5.6Ω 17 16 68 31 31 4.6 10 2.3 1.2 35 33 140 60 40 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1.0 MHz 16 2800 520 380 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 4.5V, ID = 10A VGS = 2.5V, ID = 8A 0.6 9 13 1.3 12 18 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 20 1 100 -100 V
µA
TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEM2082
25 VGS=5,4,3V VGS=2.5V 25 25 C
ID, Drain Current (A)
15
ID, Drain Current (A)
20
20
15
5
10
10
5
VGS=2.0V
5 TJ=125 C -55 C 2 3
0 0.0
0 0.5 1.0 1.5 2.0 0 1
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
3600 3000 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
2400 1800 1200 600 0 0 5 10 15
Ciss
Coss Crss 20 25
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=10A VGS=4.5V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
25 50 75 100 125 150
10
10
0
10 -25 0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEM2082
VGS, Gate to Source Voltage (V)
10 VDS=15V ID=10A 10
2
RDS(ON)Limit 1ms
1
ID, Drain Current (A)
8
10
10ms 100ms 1s DC
6
10
0
4
2
10
-1
0 0 15 30 45 60
10
-2
TA=25 C TJ=150 C Single Pulse 10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. R£cJA (t)=r (t) * R£cJA 2. R£cJA=See Datasheet 3. TJM-TA = P* R£cJA (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4
.