FJY3011R

FJY3011R NPN Epitaxial Silicon Transistor November 2006 FJY3011R NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22KΩ) Complement to FJY4011R tm Eqivalent Circuit C C E S11 B E B SOT - 523F Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 40 40 www.DataSheet4U.com Units V V V mA °C °C mW 5 100 -55~150 150 200 TSTG TJ PC Storage Temperature Range Junction Temperature Collector Power Dissipation, by RθJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol RθJA * Minimum land pad size. Parameter Thermal Resistance, Junction to Ambient Max 600 Units °C/W Electrical Characteristics* Symbol V(BR)CBO V(BR)CEO ICBO hFE VCE(sat) fT Ccb R TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product Output Capacitance Test Condition IC = 100 uA, IE = 0 IC = 1mA, IB = 0 VCB = 30 V, IE = 0 VCE = 5 V, IC = 1 mA IC = 10 mA, IB = 1 mA VCE = 10V, IC = 5 mA VCB = 10 V, IE = 0, f = 1.0 MHz MIN 40 40 Typ MAX Units V V 0.1 100 600 0.3 250 3.7 15 22 29 uA V ...