FGPF90N30

FGPF90N30 300V, 90A PDP IGBT October 2006 FGPF90N30 300V, 90A PDP IGBT Features High Current Capability Low saturation voltage: VCE(sat) =1.5V @ IC = 60A High Input Impedance Fast switch RoHS Complaint tm Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution loss is essential. Application . PDP System TO-220F 1 1.Gate 2.Collector 3.Emitter www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100οC Description Collector-Emitter Voltage FGPF90N30 300 ± 30 220 56.8 22.7 -55 to +150 -55 to +150 300 Units V V A W W o C oC o C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 2.2 62.5 Units o o C/W C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF90N30 Rev. A FGPF90N30 300V, 90A PDP IGBT Package Marking and Ordering Information Device Marking FGPF90N30 Device FGFP90N30TU Package TO-220F TC = 25oC unless other...