FGPF70N30

FGPF70N30 300V, 70A PDP IGBT October 2006 FGPF70N30 300V, 70A PDP IGBT Features High Current Capability Low saturation voltage: VCE(sat) =1.4V @ IC = 40A High Input Impedance Fast switching RoHS Complaint General Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF70N30 offers the optimum solution for PDP applications where low-condution loss is essential. Application . PDP System TO-220F 1 1.Gate 2.Collector 3.Emitter www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100oC Description Collector-Emitter Voltage FGPF70N30 300 ±30 160 52 20.8 -55 to +150 -55 to +150 300 Units V V A W W o C oC o C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 2.4 62.5 Units o o C/W C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF70N30 Rev. A FGPF70N30 300V, 70A PDP IGBT Package Marking and Ordering Information Device Marking FGPF70N30 Device FGPF70N30TU Package TO-220F = 25oC unless othe...