PDP IGBT
FGA90N30D 300V PDP IGBT
September 2006
FGA90N30D
300V PDP IGBT
Features
• High Current Capability • Low saturation vol...
Description
FGA90N30D 300V PDP IGBT
September 2006
FGA90N30D
300V PDP IGBT
Features
High Current Capability Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A High Input Impedance
Description
Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.
C
G
TO-3P
G C E
E
TC = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL
Notes:
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current
(Note 1)
FGA90N30D
300 ± 30 @ TC = 25°C www.DataSheet4U.com @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C 90 220 10 40 219 87 -55 to +150 -55 to +150 300
Units
V V A A A A W W °C °C °C
Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
(1) Repetitive test , pulse width = 100usec , Duty = 0.5 * Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(DIODE) RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
0.57 1.56 40
Units
°C/W °C/W °C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA90N30D Rev. A
FGA90N30D 300V PDP...
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