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FFPF08S60S Dataheets PDF



Part Number FFPF08S60S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Stealth 2 Diode
Datasheet FFPF08S60S DatasheetFFPF08S60S Datasheet (PDF)

FFPF08S60S Stealth 2 Rectifier April 2007 FFPF08S60S Stealth 2 Rectifier Features • High Speed Switching ( Max. trr<30ns @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated tm 8A, 600V Stealth 2 Rectifier The FFPF08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeli.

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FFPF08S60S Stealth 2 Rectifier April 2007 FFPF08S60S Stealth 2 Rectifier Features • High Speed Switching ( Max. trr<30ns @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated tm 8A, 600V Stealth 2 Rectifier The FFPF08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits Pin Assignments TO-220F-2L 1. Cathode 2. Anode www.DataSheet4U.com 1 1. Cathode 2 2. Anode Absolute Maximum Ratings Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG TC = 25°C unless otherwise noted Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature = 25°C unless otherwise noted Value 600 600 600 @ TC = 95 °C 8 80 - 65 to +150 Units V V V A A °C Thermal Characteristics T Symbol RθJC C Parameter Maximum Thermal Resistance, Junction to Case Max 3.4 Units °C/W Package Marking and Ordering Information Device Marking F08S60S Device FFPF08S60STU Package TO-220F-2L Reel Size - Tape Width - Quantity 50 ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFPF08S60S Rev. A FFPF08S60S Stealth 2 Rectifier Electrical Characteristics T Parameter VFM 1 C = 25°C unless otherwise noted Conditions IF = 8A IF = 8A VR = 600V VR = 600V IF =1A, di/dt = 100A/µs, VR= 30V IF =8A, di/dt = 200A/µs, VR = 390V TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 25 °C Min. 20 Typ. 2.1 1.6 19 2.2 0.6 21 58 4.3 1.3 125 - Max 2.6 100 500 25 30 - Units V V µA µA ns ns A nC ns A nC mJ IRM1 trr trr Irr S factor Qrr trr Irr S factor Qrr WAVL IF =8A, di/dt = 200A/µs, VR= 390V TC = 125 °C Avalanche Energy (L = 40mH) Notes: 1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms 2 FFPF08S60S Rev. A www.fairchildsemi.com FFPF08S60S Stealth 2 Rectifier Typical Performance Characteristics T Figure 1. Typical Forward Voltage Drop 100 C = 25°C unless otherwise noted Figure 2. Typical Reverse Current 1E-4 FPRWARD CURRENT, IF [A] REVERSE CURRENT, IR [A] 1E-5 TC=125 C 10 o TC = 125 C 1E-6 o TC=25 C 1 o TC = 75 C 1E-7 o TC=75 C o TC = 25 C 1E-8 o 0.1 0.0 1E-9 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 100 200 300 400 500 600 FORWARD VOLTAGE, VF [V] REVERSE VOLTAGE, VR [V] Figure 3. Typical Junction Capacitance 100 Figure 4. Typical Reverse Recovery Time 100 JUNCTION CAPACITANCE, CJ [pF] 90 80 70 60 50 40 30 20 10 0 1 10 100 REVERSE RECOVERY TIME, trr [ns] f = 1MHz 90 80 70 60 50 40 30 20 10 0 100 o IF = 8A TC = 125 C o TC = 75 C TC = 25 C o 1000 200 300 400 500 REVERSE VOLTAGE, VR [V] di/dt [A/µs] Figure 5. Typical Reverse Recovery Current REVERSE RECOVERY CURRENT, Irr [A] 10 9 8 7 6 5 4 3 2 1 0 100 o Figure 6. Forward Current Deration Curve AVERAGE FORWARD CURRENT, IF(AV) [A] 12 11 10 9 8 7 6 5 4 3 2 1 0 70 80 90 100 110 120 o IF =8A TC = 125 C TC = 75 C o DC TC = 25 C o 200 300 400 500 130 140 150 di/dt [A/µs] CASE TEMPERATURE, TC [ C] 3 FFPF08S60S Rev. A www.fairchildsemi.com FFPF08S60S Stealth 2 Rectifier Mechanical Dimensions TO-220F 2L 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70) 3.30 ±0.10 6.68 ±0.20 15.80 ±0.20 (1.00x45°) (6.50) (1.80) 9.75 ±0.30 12.00 ±0.20 MAX1.47 0.80 ±0.10 2.76 ±0.20 0.35 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters 4 FFPF08S60S Rev. A 15.87 ±0.20 www.fairchildsemi.com tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ tm TinyBoost™ TinyBuck™ Tin.


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