Document
FFPF08S60S Stealth 2 Rectifier
April 2007
FFPF08S60S Stealth 2 Rectifier
Features
• High Speed Switching ( Max. trr<30ns @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated
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8A, 600V Stealth 2 Rectifier
The FFPF08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Applications
• General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits
Pin Assignments
TO-220F-2L 1. Cathode 2. Anode
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1 1. Cathode
2 2. Anode
Absolute Maximum Ratings
Symbol
VRRM VRWM VR IF(AV) IFSM TJ, TSTG
TC = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature
= 25°C unless otherwise noted
Value
600 600 600 @ TC = 95 °C 8 80 - 65 to +150
Units
V V V A A °C
Thermal Characteristics T
Symbol RθJC
C
Parameter Maximum Thermal Resistance, Junction to Case
Max 3.4
Units °C/W
Package Marking and Ordering Information
Device Marking
F08S60S
Device
FFPF08S60STU
Package
TO-220F-2L
Reel Size
-
Tape Width
-
Quantity
50
©2006 Fairchild Semiconductor Corporation
1
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FFPF08S60S Rev. A
FFPF08S60S Stealth 2 Rectifier
Electrical Characteristics T
Parameter
VFM
1
C
= 25°C unless otherwise noted
Conditions
IF = 8A IF = 8A VR = 600V VR = 600V IF =1A, di/dt = 100A/µs, VR= 30V IF =8A, di/dt = 200A/µs, VR = 390V TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 25 °C
Min.
20
Typ.
2.1 1.6 19 2.2 0.6 21 58 4.3 1.3 125 -
Max
2.6 100 500 25 30 -
Units
V V µA µA ns ns A nC ns A nC mJ
IRM1 trr trr Irr S factor Qrr trr Irr S factor Qrr WAVL
IF =8A, di/dt = 200A/µs, VR= 390V
TC = 125 °C
Avalanche Energy (L = 40mH)
Notes: 1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
2 FFPF08S60S Rev. A
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FFPF08S60S Stealth 2 Rectifier
Typical Performance Characteristics T
Figure 1. Typical Forward Voltage Drop
100
C
= 25°C unless otherwise noted
Figure 2. Typical Reverse Current
1E-4
FPRWARD CURRENT, IF [A]
REVERSE CURRENT, IR [A]
1E-5
TC=125 C
10
o
TC = 125 C
1E-6
o
TC=25 C
1
o
TC = 75 C
1E-7
o
TC=75 C
o
TC = 25 C
1E-8
o
0.1 0.0
1E-9 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 100 200 300 400 500 600
FORWARD VOLTAGE, VF [V]
REVERSE VOLTAGE, VR [V]
Figure 3. Typical Junction Capacitance
100
Figure 4. Typical Reverse Recovery Time
100
JUNCTION CAPACITANCE, CJ [pF]
90 80 70 60 50 40 30 20 10 0 1 10 100
REVERSE RECOVERY TIME, trr [ns]
f = 1MHz
90 80 70 60 50 40 30 20 10 0 100
o
IF = 8A
TC = 125 C
o
TC = 75 C
TC = 25 C
o
1000
200
300
400
500
REVERSE VOLTAGE, VR [V]
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
REVERSE RECOVERY CURRENT, Irr [A]
10 9 8 7 6 5 4 3 2 1 0 100
o
Figure 6. Forward Current Deration Curve
AVERAGE FORWARD CURRENT, IF(AV) [A]
12 11 10 9 8 7 6 5 4 3 2 1 0 70 80 90 100 110 120
o
IF =8A
TC = 125 C
TC = 75 C
o
DC
TC = 25 C
o
200
300
400
500
130
140
150
di/dt [A/µs]
CASE TEMPERATURE, TC [ C]
3 FFPF08S60S Rev. A
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FFPF08S60S Stealth 2 Rectifier
Mechanical Dimensions
TO-220F 2L
10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70)
3.30 ±0.10
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
(6.50)
(1.80)
9.75 ±0.30
12.00 ±0.20
MAX1.47 0.80 ±0.10
2.76 ±0.20
0.35 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
+0.10
0.50 –0.05
9.40 ±0.20
4.70 ±0.20
Dimensions in Millimeters
4 FFPF08S60S Rev. A
15.87 ±0.20
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tm
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