FDY4001CZ

FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA „ Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA „ Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications „ Level shifting „ Power Supply Converter Circuits „ Load/Power Switching Cell Phones, Pagers „ Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA „ Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA „ Max rDS(on) = 15Ω at VGS = -1.8V, ID = -100mA „ ESD protection diode (note 3) „ RoHS Compliant 6 5 4 www.DataSheet4U.com S2 4 3 D2 G2 5 2 G1 1 2 3 D1 6 1 S1 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Q1 20 ±12 200 1000 625 446 -55 to 150 Q2 -20 ±8 -150 -1000 Units V V mA mW °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 200 280 °C/W Package Marking and Ordering Information Device Marking F Device FDY4001CZ Package SC8...