N-Channel MOSFET
FDS8876 N-Channel PowerTrench® MOSFET
April 2007
FDS8876 N-Channel PowerTrench® MOSFET
30V, 12.5A, 8.2mΩ
tm
Features...
Description
FDS8876 N-Channel PowerTrench® MOSFET
April 2007
FDS8876 N-Channel PowerTrench® MOSFET
30V, 12.5A, 8.2mΩ
tm
Features
rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A High performance trench technology for extremely low
rDS(on) Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
DC/DC converters
Branding Dash
1 2 3 4
SO-8
5
54 63 72 81
©2007 Fairchild Semiconductor Corporation FDS8876 Rev. B
1
www.fairchildsemi.com
FDS8876 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS
ID
Parameter Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
PD
Power dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient (Note 2a) Thermal Resistance, Junction to Ambient (Note 2b)
Package Marking and Ordering Information
Device Marking FDS8876
Device FDS8876
Package SO-8
Reel Si...
Similar Datasheet