FDS8878

FDS8878 N-Channel PowerTrench® MOSFET June 2005 FDS8878 N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ Features „ rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A „ rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications „ DC/DC converters www.DataSheet4U.com Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 ©2005 Fairchild Semiconductor Corporation FDS8878 Rev. A1 1 www.fairchildsemi.com FDS8878 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, Rθ JA = 50oC/W) Continuous (TA = Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 25oC, VGS = 4.5V, RθJA = 50oC/W) 10.2 9.3 Figure 4 57 2.5 20 -55 to 150 A A A mJ W mW/oC oC Ratings 30 ±20 Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (No...