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FDS8880 Dataheets PDF



Part Number FDS8880
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS8880 DatasheetFDS8880 Datasheet (PDF)

FDS8880 N-Channel PowerTrench® MOSFET April 2005 FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features r DS(ON) = 10mΩ, VGS = 10V, ID = 11.6A r DS(ON) = 12mΩ, VGS = 4.5V, ID = 10.7A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM co.

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FDS8880 N-Channel PowerTrench® MOSFET April 2005 FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features r DS(ON) = 10mΩ, VGS = 10V, ID = 11.6A r DS(ON) = 12mΩ, VGS = 4.5V, ID = 10.7A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications DC/DC converters www.DataSheet4U.com Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 ©2005 Fairchild Semiconductor Corporation FDS8880 Rev. A1 1 www.fairchildsemi.com FDS8880 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W) Continuous (TA = 25 C, VGS = 4.5V, Rθ JA = 50 C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature o o Ratings 30 ±20 11.6 10.7 Figure 4 82 2.5 20 -55 to 150 Units V V A A A mJ W mW/oC o C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 25 50 85 oC/W o o C/W C/W Package Marking and Ordering Information Device Marking FDS8880 FDS8880 Device FDS8880 FDS8880_NL (Note 4) Package SO-8 SO-8 Reel Size 330mm 330mm Tape Width 12mm 12mm Quantity 2500 units 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V VGS = ±20V TA = 150oC 30 1 250 ±100 V µA nA On Characteristics VGS(TH) Gate to Source Threshold Voltage V GS = VDS, ID = 250µA ID = 11.6A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 10.7A, VGS = 4.5V ID = 11.6A, VGS = 10V, TA = 150oC 1.2 0.0079 0.0096 2.5 0.010 0.012 Ω V 0.0125 0.0163 Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 11.6A Ig = 1.0mA 0.6 1235 260 150 2.5 23 12 1.3 3.3 2.0 4.2 4.3 30 16 1.6 pF pF pF Ω nC nC nC nC nC nC 2 FDS8880 Rev. A1 www.fairchildsemi.com FDS8880 N-Channel PowerTrench® MOSFET Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID = 11.6A VGS = 10V, RGS = 11Ω 7 27 38 15 51 80 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 11.6A ISD = 2.1A ISD = 11.6A, dISD/dt=100A/µs ISD = 11.6A, dISD/dt=100A/µs 1.25 1.0 30 20 V V ns nC Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 12.8A, VDD = 30V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in2 copper on FR-4 board 4: FDS8880_NL is lead free product. FDS8880_NL marking will appear on the reel label. 3 FDS8880 Rev. A1 www.fairchildsemi.com FDS8880 N-Channel PowerTrench® MOSFET Typical Characteristics TA = 25°C unless otherwise noted 1.2 12 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 10 VGS = 10V 8 VGS = 4.5V 0.8 0.6 6 0.4 4 0.2 2 RθJA=50o C/W 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (o C) TA , AMBIENT TEMPERATURE (oC) 0 Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature RθJA=50oC/W ZθJA, NORMALIZED THERMAL IMPEDANCE 0.1 PDM 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 10-5 10-4 10 -3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION (s) 101 10 2 103 Figure 3. Normalized Maximum Transient Thermal Impedance 1400 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A) VGS = 10V TA = 25 oC FOR TEMPERATURES ABOVE 25o C DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 4.5V 100 150 - TA 125 10 10 -5 10-4 10-3 10-2 10-1 t , PULSE WIDTH (s) 100 101 102 103 .


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