FDP7N50/FDPF7N50 500V N-Channel MOSFET
March 2007
FDP7N50/FDPF7N50
500V N-Channel MOSFET Features
• 7A, 500V, RDS(on) ...
FDP7N50/FDPF7N50 500V N-Channel MOSFET
March 2007
FDP7N50/FDPF7N50
500V N-Channel MOSFET Features
7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V Low gate charge ( typical 12.8 nC) Low Crss ( typical 9 pF) Fast switching 100% avalanche tested Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G G DS
TO-220
FDP Series
GD S
www.DataSheet4U.com
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDP7N50
7 4.2 28
FDPF7N50
500 7* 4.2 * 28 * ±30 270 7 8.9 4.5
Unit
V A A A V mJ A mJ V/ns
89 0.71 -55 to +150 300
39 0.31
W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5...