N-CHANNEL ENHANCEMENT MODE
AP2302N
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package
S...
Description
AP2302N
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 85mΩ 3.2A
Description
SOT-23
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The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
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Absolute Maximum Ratings
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Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current
1,2 3 3
Rating 20 ±12 3.2 2.6 10 1.38 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200503044
AP2302N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 6 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50
Max. Units 85 115 1.2 1 10 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A
VGS(th) gfs IDSS IGSS Q...
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