P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2305AN
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
S D...
Description
AP2305AN
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80mΩ - 3.2A
Description
SOT-23
G
D
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2 3 3
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Parameter
Rating - 30 ± 12 -3.2 -2.6 -10 1.38 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200731031
AP2305AN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. -30 -0.5 -
Typ. -0.1
Max. Units 60 80 150 250 -1.2 -1 -25 ±100 18 1325 V V/℃ mΩ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature C...
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