FDMC8854

FDMC8854 N-Channel PowerTrench® MOSFET February 2007 FDMC8854 N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ Features General Description „ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A „ Low Profile - 1mm max in Power 33 „ RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Application „ DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 4 3 2 1 www.DataSheet4U.com 7 4 3 2 1 S S S G 8 Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 15 67 15 30 41 2.0 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 °C/W Package Marking and Ordering Information Device Marking FDMC8854 Device FDMC8854 Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMC8854 Rev.C 1 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwi...