FDMB3800N

FDMB3800N Dual N-Channel PowerTrench® MOSFET January 2006 FDMB3800N Dual N-Channel PowerTrench® MOSFET 4.8A, 30V, 40mΩ General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. LE A REE I DF Features „ RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V „ Fast switching speed „ Low gate charge „ High performance trench technology for extremely low RDS(ON) „ High power and current handling capability. „ RoHS Compliant Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 4.8 9 1.6 0.75 -55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 80 165 °C/W Package Marking and Ordering Information Device Marking 3800 Device FDMB3800N Reel Size 7inch 1 ©2006 Fairchild Semiconductor Corporation FDMB3800N Rev. C M ENTATIO LE N MP GATE SOURCE www.Data...