FDMB506P

FDMB506P December 2005 FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features –6.8 A, –20V. RDS(ON) = 30 mΩ @ VGS = –4.5V RDS(ON) = 38 mΩ @ VGS = –2.5V RDS(ON) = 70 mΩ @ VGS = –1.8V Low profile – 0.8 mm maximum Fast switching Applications Load switch DC/DC Conversion RoHS compliant PIN 1 GATE S D www.DataSheet4U.com 5 6 7 8 4 3 2 1 G D D D SOURCE D D MicroFET 3x1.9 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –6.8 70 1.9 –55 to +150 (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 65 208 °C/W Package Marking and Ordering Information Device Marking 506 Device FDMB506P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2005 Fairchild Semiconductor Corporation FDMB506P Rev C1(W) FDMB506P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25...