FDMA1023PZ

FDMA1023PZ Dual P-Channel PowerTrench® MOSFET March 2007 FDMA1023PZ –20V, –3.7A, 72mΩ Features Dual P-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ Max rDS(on) = 72mΩ at VGS = –4.5V, ID = –3.7A „ Max rDS(on) = 95mΩ at VGS = –2.5V, ID = –3.2A „ Max rDS(on) = 130mΩ at VGS = –1.8V, ID = –2.0A „ Max rDS(on) = 195mΩ at VGS = –1.5V, ID = –1.0A „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant Pin 1 S1 G1 D2 S1 D1 1 6 D1 D2 www.DataSheet4U.com G1 2 5 4 G2 D2 3 MicroFET 2X2 D1 G2 S2 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±8 –3.7 –6 1.5 0.7 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single ...