FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
February 2007
FDFMA2P857
Integrated P-Channel ...
FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and
Schottky Diode
February 2007
FDFMA2P857
Integrated P-Channel PowerTrench® MOSFET and
Schottky Diode
–20V, –3.0A, 120mΩ Features
MOSFET:
Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage
schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.
Schottky:
VF < 0.54V @ 1A Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant
Pin 1 A NC D A 1
www.DataSheet4U.com
6 C 5 G 4 S
NC 2 D 3
C MicroFET 2x2
G
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings 20 ±8 –3 –6 1.4 0.7 –55 to +150 30 1 Units V V A W °C V A
Thermal Characteristics
RθJA RθJA RθJA RθJA Thermal Resistan...