FDFMA2P857

FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20V, –3.0A, 120mΩ Features MOSFET: „ Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A „ Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A „ Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. Schottky: „ VF < 0.54V @ 1A „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant Pin 1 A NC D A 1 www.DataSheet4U.com 6 C 5 G 4 S NC 2 D 3 C MicroFET 2x2 G S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings 20 ±8 –3 –6 1.4 0.7 –55 to +150 30 1 Units V V A W °C V A Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistan...