FDD8580

FDD8580/FDU8580 N-Channel PowerTrench® MOSFET July 2006 FDD8580/FDU8580 N-Channel PowerTrench® MOSFET 20V, 35A, 9mΩ Features General Description „ Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A „ Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D www.DataSheet4U.com G G D S I-PAK (TO-251AA) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature (Note 1) (Note 2) Ratings 20 ±20 35 58 159 66 49.5 -55 to 175 mJ W °C A Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 3.03 100 52 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD8580 FDU8580 Device FDD8580 FDU8580 Package TO-...