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FDU6N50

N-Channel MOSFET

Description

FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A Low Gate Charge (Typ. 12.8 nC) Low Crss (Typ. 9 pF) 100% Avalanche Tested Improved dv/dt Capability Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply AC-DC Powe...

Fairchild Semiconductor

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