FDC608PZ

FDC608PZ June 2006 FDC608PZ P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions. tm Features –5.8 A, –20 V. RDS(ON) = 30 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V Low Gate Charge High performance trench technology for extremely low RDS(ON) SuperSOT TM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). D D S 1 2 6 5 4 SuperSOT TM -6 D D G www.DataSheet4U.com 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –5.8 –20 1.6 0.8 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Device FDC608PZ (Note 1a) (Note 1) 78 30 Tape width 8mm °C/W °C/W Quantity 3000 units Package Marking and Ordering Information Device Marking .608Z Reel Size 7’’ ©2006 Fairchild Semiconductor Corpor...