FDA79N15

FDA79N15 150V N-Channel MOSFET UniFET FDA79N15 150V N-Channel MOSFET Features 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D { z G{   z z TO-3P G DS { FDA Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDA79N15 150 79 50 316 ±30 1669 79 41.7 4.5 417 3.3 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter T...