FCB20N60

FCB20N60 — N-Channel SuperFET® MOSFET FCB20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features 650 V @TJ = 150 °C Typ. RDS(on) = 150 m Ultra Low Gate Charge (Typ. Qg = 75 nC) Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) 100% Avalanche Tested RoHS Compliant Application Lighting Solar Inverter AC-DC Power Supply October 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D D G S D2-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds S (Note 1) (...