EGF1B

EGF1A - EGF1D EGF1A - EGF1D Features Low forward voltage drop. Low profile package. Fast switching for high efficiency. 3.93 3.73 0.181 (4.597) 0.157 (3.988) 0.062 (1.575) 0.055 (1.397) 2 1 0.114 (2.896) 0.098 (2.489) 0.208 (5.283) 0.188 (4.775) 1.67 1.47 + 2.38 2.18 5.49 5.29 Minimum Recommended Land Pattern SMA/DO-214AC COLOR BAND DENOTES CATHODE 0.096 (2.438) 0.078 (1.981) 0.060 (1.524) 0.030 (0.762) 0.008 (0.203) 0.002 (0.051) 0.012 (0.305) 0.006 (0.152) 1.0 Ampere High Efficiency Glass Passivated Rectifier Absolute Maximum Ratings* Symbol IO if(surge) TA = 25°C unless otherwise noted Parameter Average Rectified Current @ T L = 100°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ** Thermal Resistance, Junction to Case ** Storage Temperature Range Operating Junction Temperature Value 1.0 Units A 30 2.0 13 85 30 -65 to +175 -65 to +175 A W mW/°C °C/W °C/W °C °C PD RθJA RθJC Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Parameter TA = 25°C unless otherwise noted Device 1A 1B 100 70 100 10 100 1.0 50 15 1C 150 105 150 1D 200 140 200 50 35 50 Units V V V µA µA V ns pF Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ ra...