D45C8

D45C8 — PNP Power Amplifier D45C8 PNP Power Amplifier Sourced from process 5P. January 2010 1 TO-220 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -60 -4.0 -55 to +150 Units V A °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0 ICES Collector-Emitter-(Base)Short VCE = -70V, IE = 0 ICEO Collector-Emitter-(Base)Open VCE = -55V, IE = 0 IEBO Emitter-Base Current VEB = -5.0V, IB = 0 On Characteristics hFE DC Current Gain VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage Small Signal Characteristics VCE = -1.0V, IC = -0.2A VCE = -1.0V, IC = -2.0A IC = -1.0A, IB = -50mA IC = -1.0A, IB = -100mA Cob Output Capacitance VCB = -10V, f = 1.0MHz fT Current Gain Bandwidth Product IC = -20mA, VCE = -4.0V tON td, Delay Time tr, Rise Time tOFF ts, Storage Time tf, Fall Time IC = -1.0A, IB1 = IB2 = -0.1A VCC = -30V, tp = 25μs Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Min. -60 40 20 32 Typ. 59 502 474 59 Max. 60 480 2.1 62.5 Max. ...