BSP50
BSP50
NPN Darlington Transistor
This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03.
2 1 4
3
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol VCER VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Col...
