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AAT8515
20V P-Channel Power MOSFET General Description
The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package.
Features
• • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -5.4A @ 25°C Low On-Resistance: — 35mΩ @ VGS = -4.5V — 60mΩ @ VGS = -2.5V
Applications
• • • Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones
SC70JW-8 Package
Top View
D 8 D 7 D 6 D 5
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted. Symbol
VDS VGS ID IDM IS TJ TSTG
1 S
2 S
3 S
4 G
Description
Drain-Source Voltage Gate-Source Voltage
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Value
-20 ±12 ±5.4 ±4.3 ±32 -1.5 -55 to 150 -55 to 150
Units
V
Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range
TA = 25°C TA = 70°C
A
°C °C
Thermal Characteristics1
Symbol
RθJA RθJA2 RθJF PD
Description
Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25°C TA = 70°C
Typ
100 61 33
Max
120 73.5 40 1.7 1.0
Units
°C/W °C/W °C/W W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs. 8515.2005.04.1.0
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AAT8515
20V P-Channel Power MOSFET Electrical Characteristics
TJ = 25°C, unless otherwise noted. Symbol Description
DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source On-Resistance1
Conditions
VGS = 0V, ID = -250µA
Min
-20
Typ Max
Units
V
VGS = -4.5V, ID = -5.4A VGS = -2.5V, ID = -4.1A 1 ID(ON) On-State Drain Current VGS = -4.5V, VDS = -5V (pulsed) VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250µA IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V V = 0V, VDS = -20V IDSS Drain Source Leakage Current GS VGS = 0V, VDS = -16V, TJ = 70°C2 1 gfs Forward Transconductance VDS = -5V, ID = -5.4A Dynamic Characteristics2 QG Total Gate Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V QGS Gate-Source Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V QGD Gate-Drain Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V tD(ON) Turn-On Delay VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tR Turn-On Rise Time VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tD(OFF) Turn-Off Delay VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tF Turn-Off Fall Time VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -5.4A Voltage1 IS Continuous Diode Current3
27 46 -32 -0.6
35 60
mΩ A V nA µA S
±100 -1 -5 12 13.6 2.3 5.5 10 37 36 52 -1.4 -1.5
nC
ns
V A
1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
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8515.2005.04.1.0
AAT8515
20V P-Channel Power MOSFET Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Output Characteristics
32
Transfer Characteristics
32
5V 4.5V
24
4V 3.5V
VD=VG
24
25°C -55°C 125°C
3V IDS (A) ID (A) 2V
8 16 16
2.5V
8
1.5V
0 0 1 2 3 4
0 0 1 2 3 4 5
VDS (V)
VGS (V)
On-Resistance vs. Drain Current
60 50 40 30 20 10 0 0 2 4 6 8 10 12 120
On-Resistance vs. Gate-to-Source Voltage
ID = 6.5A
VGS = 2.5 V RDS(ON) (mΩ)
100 80 60 40 20 0 0 1 2 3 4 5
RDS(ON) (mΩ)
VGS = 4.5 V
ID (A)
VGS (V)
On-Resistance vs. Junction Temperature
1.4 1.3 0.5
Threshold Voltage
ID = 250µA
Normalized RDS(ON)
VGS(th) Variance (V)
VGS = 4.5V ID = 6.5A
0.4 0.3 0.2 0.1 0 -0.1 -0.2
1.2 1.1 1.0 0.9 0.8 0.7 0.6
-0.3 -50 -25 0 25 50 75 100 125 150
-50
-25
0
25
50
75
100
125
150
TJ (°C)
TJ (°C)
8515.2005.04.1.0
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AAT8515
20V P-Channel Power MOSFET Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Gate Charge
5 4 3
Source-Drain Diode Forward Voltage
100
VD=15V ID=6.5A
10
TJ = 150°C TJ = 25°C
VGS (V)
2 1 0 0 3 6 9 12 15
IS (A)
1 0.1 0 0.2 0.4 0.6
0.