DatasheetsPDF.com

AAT8515 Dataheets PDF



Part Number AAT8515
Manufacturers AAT
Logo AAT
Description P-Channel Power MOSFET
Datasheet AAT8515 DatasheetAAT8515 Datasheet (PDF)

AAT8515 20V P-Channel Power MOSFET General Description The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package. Features • • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -5.4A @ 25°C Low On-Resistanc.

  AAT8515   AAT8515



Document
AAT8515 20V P-Channel Power MOSFET General Description The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package. Features • • • Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -5.4A @ 25°C Low On-Resistance: — 35mΩ @ VGS = -4.5V — 60mΩ @ VGS = -2.5V Applications • • • Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones SC70JW-8 Package Top View D 8 D 7 D 6 D 5 Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 S 2 S 3 S 4 G Description Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Value -20 ±12 ±5.4 ±4.3 ±32 -1.5 -55 to 150 -55 to 150 Units V Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C A °C °C Thermal Characteristics1 Symbol RθJA RθJA2 RθJF PD Description Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25°C TA = 70°C Typ 100 61 33 Max 120 73.5 40 1.7 1.0 Units °C/W °C/W °C/W W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs. 8515.2005.04.1.0 1 AAT8515 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25°C, unless otherwise noted. Symbol Description DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source On-Resistance1 Conditions VGS = 0V, ID = -250µA Min -20 Typ Max Units V VGS = -4.5V, ID = -5.4A VGS = -2.5V, ID = -4.1A 1 ID(ON) On-State Drain Current VGS = -4.5V, VDS = -5V (pulsed) VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250µA IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V V = 0V, VDS = -20V IDSS Drain Source Leakage Current GS VGS = 0V, VDS = -16V, TJ = 70°C2 1 gfs Forward Transconductance VDS = -5V, ID = -5.4A Dynamic Characteristics2 QG Total Gate Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V QGS Gate-Source Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V QGD Gate-Drain Charge VDS = -15V, RD = 2.3Ω, VGS = -4.5V tD(ON) Turn-On Delay VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tR Turn-On Rise Time VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tD(OFF) Turn-Off Delay VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω tF Turn-Off Fall Time VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -5.4A Voltage1 IS Continuous Diode Current3 27 46 -32 -0.6 35 60 mΩ A V nA µA S ±100 -1 -5 12 13.6 2.3 5.5 10 37 36 52 -1.4 -1.5 nC ns V A 1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2 8515.2005.04.1.0 AAT8515 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Output Characteristics 32 Transfer Characteristics 32 5V 4.5V 24 4V 3.5V VD=VG 24 25°C -55°C 125°C 3V IDS (A) ID (A) 2V 8 16 16 2.5V 8 1.5V 0 0 1 2 3 4 0 0 1 2 3 4 5 VDS (V) VGS (V) On-Resistance vs. Drain Current 60 50 40 30 20 10 0 0 2 4 6 8 10 12 120 On-Resistance vs. Gate-to-Source Voltage ID = 6.5A VGS = 2.5 V RDS(ON) (mΩ) 100 80 60 40 20 0 0 1 2 3 4 5 RDS(ON) (mΩ) VGS = 4.5 V ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.4 1.3 0.5 Threshold Voltage ID = 250µA Normalized RDS(ON) VGS(th) Variance (V) VGS = 4.5V ID = 6.5A 0.4 0.3 0.2 0.1 0 -0.1 -0.2 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -0.3 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (°C) TJ (°C) 8515.2005.04.1.0 3 AAT8515 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Gate Charge 5 4 3 Source-Drain Diode Forward Voltage 100 VD=15V ID=6.5A 10 TJ = 150°C TJ = 25°C VGS (V) 2 1 0 0 3 6 9 12 15 IS (A) 1 0.1 0 0.2 0.4 0.6 0.


AAT8543 AAT8515 AAT8401


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)