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NSDEMP11XV6T1

ON Semiconductor

(NSDEMP11XV6T1 / NSDEMP11XV6T5) Common Anode Quad Array Switching Diode

NSDEMP11XV6T1, NSDEMP11XV6T5 Common Anode Quad Array Switching Diode These Common Anode Epitaxial Planar QUAD Diodes are...


ON Semiconductor

NSDEMP11XV6T1

File Download Download NSDEMP11XV6T1 Datasheet


Description
NSDEMP11XV6T1, NSDEMP11XV6T5 Common Anode Quad Array Switching Diode These Common Anode Epitaxial Planar QUAD Diodes are designed for use in ultra high speed switching applications. The NSDEMP11XV6T1 device is housed in the SOT−563 package which is designed for low power surface mount applications, where board space is at a premium. Features http://onsemi.com (3) (2) (1) Fast trr Low CD These are Pb−Free Devices (4) (5) (6) MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol VR VRM IF IFM IFSM (Note 1) Value 80 80 100 300 Unit Vdc Vdc 1 mAdc mAdc SOT−563 CASE 463A PLASTIC 2.0 Adc www.DataSheet4U.com THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C MARKING DIAGRAM Symbol PD Max 357 (Note 2) 2.9 (Note 2) 350 (Note 2) Max 500 (Note 2) 4.0 (Note 2) 250 (Note 2) −55 to +150 Unit mW mW/°C °C/W P9 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) P9 M G G Symbol PD Unit mW mW/°C °C/W °C ORDERING INFORMATION Device NSDEMP11XV6T1 Package Shipping † SOT−563* 4000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stre...




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