NSBA124EDXV6T1

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT−563 package which is ideal for low−power surface mount applications where board space is at a premium. Features (3) R1 Q1 Q2 R2 (4) R1 (5) (6) http://onsemi.com (2) R2 (1) Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices www.DataSheet4U.com 1 SOT−563 CASE 463A PLASTIC STYLE 1 MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value −50 −50 −100 Unit Vdc Vdc mAdc xx M G G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) J...