NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transi...
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT−563 package which is ideal for low−power surface mount applications where board space is at a premium.
Features
(3) R1 Q1 Q2 R2 (4) R1 (5) (6)
http://onsemi.com
(2) R2 (1)
Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices
www.DataSheet4U.com
1
SOT−563 CASE 463A PLASTIC STYLE 1
MARKING DIAGRAM
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value −50 −50 −100 Unit Vdc Vdc mAdc
xx M G G
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) J...