FDB20AN06A0

FDB20AN06A0 / FDP20AN06A0 June 2003 FDB20AN06A0 / FDP20AN06A0 N-Channel PowerTrench® MOSFET 60V, 45A, 20mΩ Features r DS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A Qg(tot) = 15nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82547 Applications Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems DRAIN (FLANGE) D SOURCE DRAIN GATE SOURCE GATE G www.DataSheet4U.com TO-220AB FDP SERIES TO-263AB DRAIN (FLANGE) S FDB SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy ( Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 45 32 9 Figure 4 50 90 0.60 -55 to 175 A A A A mJ W W/oC o Ratings 60 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 ( Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.67 62 43 oC/W o o C/W C/W This product has been designed to meet the extrem...