BC517

BC517 NPN Darlington Transistor January 2005 BC517 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Symbol VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 30 40 10 www.DataSheet4U.com Units V V V A °C - Continuous 1.2 -55 ~ 150 Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(on) Ta = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Conditions IC = 2.0mA, IB = 0 IC = 10µA, IE = 0 IE = 100nA, IC = 0 VCB = 30V, IE = 0 VCE = 2.0V, IC = 20mA IC = 100mA, IB = 0.1mA IC = 10mA, VCE = 5.0V Min. 30 40 10 Max Units V V V 100 nA On Characteristics * DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage 30,000 1 1.4 V V The...