NTGS3441P

NTGS3441P Power MOSFET −20 V, −3.16 A, Single P−Channel TSOP−6 Features Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses TSOP−6 Surface Mount Package This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(ON) TYP 91 mW @ 4.5 V −20 V 144 mW @ 2.7 V 188 mW @ 2.5 V P−Channel Unit V V A 3 1 2 5 6 −20 ±12 −2.5 −1.8 −3.16 4 −3.16 A ID MAX Applications High Side Switch in DC−DC Converters Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t = 10 s Power Dissipation (Note 1) Steady State t = 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current tp = 10 ms Steady State TA = 25°C TA = 85°C TA = 25°C PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 0.98 1.60 −1.8 −1.3 0.51 −13 −55 to 150 −1.5 260 W www.DataSheet4U.com MARKING DIAGRAM TSOP−6 CASE 318G STYLE 1 1 A S3 MG G W A °C A °C 1 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) PT = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 6 5 4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating condition...