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NUD3105 Dataheets PDF



Part Number NUD3105
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Inductive Load Driver
Datasheet NUD3105 DatasheetNUD3105 Datasheet (PDF)

NUD3105 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features • Provides a Robust Driver Interface .

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NUD3105 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features • Provides a Robust Driver Interface Between DC Relay Coil and Sensitive Logic Circuits • Optimized to Switch Relays from 3.0 V to 5.0 V Rail • Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V • Internal Zener Eliminates the Need of Free−Wheeling Diode • Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation • Low VDS(on) Reduces System Current Drain • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Typical Applications • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette Recorders • Industrial:Small Appliances, Security Systems, Automated Test Equipment, Garage Door Openers • Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches, Lamp Drivers www.onsemi.com RELAY/INDUCTIVE LOAD DRIVER 0.5 AMPERE, 8.0 VOLT CLAMP MARKING DIAGRAMS SOT−23 (TO−236) CASE 318 JW4 M G G 1 6 1 SC−74 CASE 318F STYLE 7 JW4 D G G JW4 M D G = Device Code = Date Code* = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device NUD3105LT1G Package SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel NUD3105DMT1G SOT−74 3000 / Tape & (Pb−Free) Reel SZNUD3105DMT1G SOT−74 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2002 October, 2016 − Rev. 12 1 Publication Order Number: NUD3105/D Drain (3) NUD3105 Drain (6) Drain (3) Gate (1) 1.0 k 300 k Gate (2) 1.0 k 300 k 1.0 k 300 k CASE 318 Source (2) Source (1) Source (4) CASE 318F Figure 1. Internal Circuit Diagrams Gate (5) MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Rating Value Unit VDSS VGS ID Ez Ezpk TJ TA Tstg PD Drain to Source Voltage − Continuous Gate to Source Voltage – Continuous Drain Current – Continuous Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) (Note 2) Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5) Junction Temperature Operating Ambient Temperature Storage Temperature Range Total Power Dissipation (Note 1) Derating Above 25°C SOT−23 6.0 6.0 500 50 4.5 150 −40 to 85 −65 to +150 225 1.8 Vdc Vdc mA mJ mJ °C °C °C mW mW/°C Total Power Dissipation (Note 1) Derating Above 25°C SC−74 380 mW 1.5 mW/°C RqJA Thermal Resistance, Junction−to−Ambient SOT−23 SC−74 556 °C/W 329 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. 2. Refer to the section covering Avalanche and Energy. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic OFF CHARACTERISTICS VBRDSS BVGSO Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA) Ig = 1.0 mA IDSS Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) IGSS Gate Body Leakage Current (318) (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) Gate Body Leakage Current (318F) (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) Min Typ Max Unit 6.0 8.0 9.0 − − 8.0 − − 15 − − 15 5.0 − 19 − − 50 5.0 − 35 − − 65 V V mA mA mA www.onsemi.com 2 NUD3105 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit ON CHARACTERISTICS VGS(th) Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 85°C) 0.8 1.2 1.4 0.8 − 1.4 V RDS(on) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TJ=85°C) (ID = 500 mA, VGS = 5.0 V, TJ=85°C) − − 1.2 W − − 1.3 − − 0.9 − − 1.3 − − 0.9 IDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V,.


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