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NTMS3P03R2 Dataheets PDF



Part Number NTMS3P03R2
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel Power MOSFET
Datasheet NTMS3P03R2 DatasheetNTMS3P03R2 Datasheet (PDF)

NTMS3P03R2 Power MOSFET -3.05 Amps, -30 Volts P-Channel SOIC-8 Features •ăHigh Efficiency Components in a Single SOIC-8 Package •ăHigh Density Power MOSFET with Low RDS(on) •ăMiniature SOIC-8 Surface Mount Package - Saves Board Space •ăDiode Exhibits High Speed with Soft Recovery •ăIDSS Specified at Elevated Temperature •ăAvalanche Energy Specified •ăMounting Information for the SOIC-8 Package is Provided •ăPb-Free Package is Available Applications •ăDC-DC Converters •ăLow Voltage Motor Control .

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NTMS3P03R2 Power MOSFET -3.05 Amps, -30 Volts P-Channel SOIC-8 Features •ăHigh Efficiency Components in a Single SOIC-8 Package •ăHigh Density Power MOSFET with Low RDS(on) •ăMiniature SOIC-8 Surface Mount Package - Saves Board Space •ăDiode Exhibits High Speed with Soft Recovery •ăIDSS Specified at Elevated Temperature •ăAvalanche Energy Specified •ăMounting Information for the SOIC-8 Package is Provided •ăPb-Free Package is Available Applications •ăDC-DC Converters •ăLow Voltage Motor Control •ăPower Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones http://onsemi.com -3.05 AMPERES -30 VOLTS 0.085 W @ VGS = -10 V P-Channel D G S 8 1 SOIC-8 CASE 751 STYLE 13 MARKING DIAGRAM & PIN ASSIGNMENT D D DD 8 E3P03 AYWWĂG G 1 NC S S G E3P03 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTMS3P03R2 SOIC-8 2500/Tape & Reel NTMS3P03R2G SOIC-8 2500/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ©Ă Semiconductor Components Industries, LLC, 2007 1 July, 2007 - Rev. 3 Publication Order Number: NTMS3P03R2/D NTMS3P03R2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) VDSS VGS RqJA PD ID ID IDM -30 ±20 171 0.73 -2.34 -1.87 -8.0 V V °C/W W A A A Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 100 1.25 -3.05 -2.44 -12 °C/W W A A A Thermal Resistance Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 62.5 2.0 -3.86 -3.1 -15 °C/W W A A A Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = -30 Vdc, VGS = -4.5 Vdc, Peak IL = -7.5 Apk, L = 5 mH, RG = 25 W) TJ, Tstg EAS -ā55 to +150 °C 140 mJ Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR-4 or G-10 PCB, t = steady state. 2. Mounted onto a 2″ square FR-4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state. 3. Mounted onto a 2″ square FR-4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. http://onsemi.com 2 NTMS3P03R2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Characteristic Symbol Min OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = -250 mAdc) Temperature Coefficient (Positive) V(BR)DSS -30 - Zero Gate Voltage Drain Current (VDS = -30 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = -30 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate-Body Leakage Current (VGS = -20 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +20 Vdc, VDS = 0 Vdc) IDSS - IGSS - IGSS - ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Temperature Coefficient (Negative) VGS(th) -1.0 - Static Drain-to-Source On-State Resistance (VGS = -10 Vdc, ID = -3.05 Adc) (VGS = -4.5 Vdc, ID = -1.5 Adc) RDS(on) - - Forward Transconductance (VDS = -15 Vdc, ID = -3.05 Adc) gFS - DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = -24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss - Coss - Crss - SWITCHING CHARACTERISTICS (Notes 6 & 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = -24 Vdc, ID = -3.05 Adc, VGS = -10 Vdc, RG = 6.0 W) td(on) - tr - td(off) - tf - Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = -24 Vdc, ID = -1.5 Adc, VGS = -4.5 Vdc, RG = 6.0 W) td(on) - tr - td(off) - tf - Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = -24 Vdc, VGS = -10 Vdc, ID = -3.05 Adc) Qtot - Qgs - Qgd - BODY-DRAIN DIODE RATINGS (Note 6) Diode Forward On-Voltage (IS = -3.05 Adc, VGS = 0 V) VSD - (IS = -3.05 Adc, VGS = 0 V, TJ = 125°C) - Reverse Recovery Time (IS = -3.05 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) trr - ta - tb - Reverse Recovery Stored Charge QRR - 5. Handling precautions to protect again.


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