Document
NTMS3P03R2
Power MOSFET -3.05 Amps, -30 Volts
P-Channel SOIC-8
Features
•ăHigh Efficiency Components in a Single SOIC-8 Package •ăHigh Density Power MOSFET with Low RDS(on) •ăMiniature SOIC-8 Surface Mount Package - Saves Board Space •ăDiode Exhibits High Speed with Soft Recovery •ăIDSS Specified at Elevated Temperature •ăAvalanche Energy Specified •ăMounting Information for the SOIC-8 Package is Provided •ăPb-Free Package is Available
Applications
•ăDC-DC Converters •ăLow Voltage Motor Control •ăPower Management in Portable and Battery-Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
http://onsemi.com
-3.05 AMPERES -30 VOLTS
0.085 W @ VGS = -10 V
P-Channel D
G S
8
1
SOIC-8 CASE 751 STYLE 13
MARKING DIAGRAM & PIN ASSIGNMENT
D D DD 8
E3P03 AYWWĂG
G
1 NC S S G
E3P03 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS3P03R2
SOIC-8 2500/Tape & Reel
NTMS3P03R2G SOIC-8 2500/Tape & Reel (Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
July, 2007 - Rev. 3
Publication Order Number: NTMS3P03R2/D
NTMS3P03R2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)
VDSS
VGS
RqJA PD ID ID IDM
-30
±20
171 0.73 -2.34 -1.87 -8.0
V
V
°C/W W A A A
Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)
RqJA PD
ID
ID IDM
100 1.25 -3.05 -2.44 -12
°C/W W A A A
Thermal Resistance Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)
RqJA PD
ID
ID IDM
62.5 2.0 -3.86 -3.1 -15
°C/W W A A A
Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C
(VDD = -30 Vdc, VGS = -4.5 Vdc, Peak IL = -7.5 Apk, L = 5 mH, RG = 25 W)
TJ, Tstg EAS
-ā55 to +150
°C
140
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR-4 or G-10 PCB, t = steady state. 2. Mounted onto a 2″ square FR-4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state. 3. Mounted onto a 2″ square FR-4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
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NTMS3P03R2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = -250 mAdc) Temperature Coefficient (Positive)
V(BR)DSS -30
-
Zero Gate Voltage Drain Current (VDS = -30 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = -30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate-Body Leakage Current (VGS = -20 Vdc, VDS = 0 Vdc)
Gate-Body Leakage Current (VGS = +20 Vdc, VDS = 0 Vdc)
IDSS -
IGSS -
IGSS -
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Temperature Coefficient (Negative)
VGS(th)
-1.0 -
Static Drain-to-Source On-State Resistance
(VGS = -10 Vdc, ID = -3.05 Adc) (VGS = -4.5 Vdc, ID = -1.5 Adc)
RDS(on) -
-
Forward Transconductance (VDS = -15 Vdc, ID = -3.05 Adc)
gFS
-
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(VDS = -24 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
-
Coss
-
Crss
-
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
(VDD = -24 Vdc, ID = -3.05 Adc, VGS = -10 Vdc, RG = 6.0 W)
td(on)
-
tr
-
td(off)
-
tf
-
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
(VDD = -24 Vdc, ID = -1.5 Adc, VGS = -4.5 Vdc, RG = 6.0 W)
td(on)
-
tr
-
td(off)
-
tf
-
Total Gate Charge Gate-Source Charge Gate-Drain Charge
(VDS = -24 Vdc, VGS = -10 Vdc,
ID = -3.05 Adc)
Qtot
-
Qgs
-
Qgd
-
BODY-DRAIN DIODE RATINGS (Note 6)
Diode Forward On-Voltage
(IS = -3.05 Adc, VGS = 0 V)
VSD
-
(IS = -3.05 Adc, VGS = 0 V, TJ = 125°C)
-
Reverse Recovery Time
(IS = -3.05 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms)
trr
-
ta
-
tb
-
Reverse Recovery Stored Charge
QRR
-
5. Handling precautions to protect again.