NTLJS3113P

NTLJS3113P Power MOSFET Features −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS(on) Solution in 2x2 mm Package 1.5 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device V(BR)DSS http://onsemi.com RDS(on) MAX 40 mW @ −4.5 V −20 V 50 mW @ −2.5 V 75 mW @ −1.8 V 200 mW @ −1.5 V S −7.7 A ID MAX (Note 1) Applications DC−DC Converters (Buck and Boost Circuits) Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc. High Side Load Switch G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C Steady State TA = 85°C TA = 25°C PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 3.3 −3.5 −2.5 0.7 −23 −55 to 150 −2.8 260 W A °C A °C D G 2 3 D 1 A Symbol VDSS VGS ID Value −20 ±8.0 −5.8 −4.4 −7.7 1.9 W Unit V V A Pin 1 S www.DataSheet4U.com D P−CHANNEL MOSFET D WDFN6 CASE 506AP MARKING DIAGRAM 1 2 J8MG G 3 6 5 4 J8 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either locatio...