NTJD2152P

NTJD2152P Trench Small Signal MOSFET 8 V, Dual P−Channel, SC−88 ESD Protection Features http://onsemi.com V(BR)DSS RDS(on) TYP 0.22 W @ −4.5 V −8 V 0.32 W @ −2.5 V 0.51 W @ −1.8 V −0.775 A ID Max Leading –8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC−70−6 Pb−Free Packages are Available Load Power switching DC−DC Conversion Li−Ion Battery Charging Circuits Cell Phones, Media Players, Digital Cameras, PDAs Applications SOT−363 SC−88 (6 LEADS) S1 Value −8.0 ±8.0 Unit V V A 1 6 D1 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Based on RqJA) Power Dissipation (Based on RqJA) Continuous Drain Current (Based on RqJL) Power Dissipation (Based on RqJL) Pulsed Drain Current Steady State Steady State Steady State Steady State TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C t ≤10 ms PD IDM TJ, TSTG IS TL ID PD Symbol VDSS VGS ID G1 2 5 G2 www.DataSheet4U.com −0.775 −0.558 0.27 0.14 −1.1 −0.8 0.55 0.29 ±1.2 −55 to 150 −0.775 260 D2 3 4 S2 W Top View A MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 1 6 TA M G G 1 S1 G1 D2 TA M G = Device Code = Date Code = Pb−Free Package W SC−88/SOT−363 A CASE 419B STYLE 28 Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C A °C (Note: Mi...