MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MUN5111DW1T1/D
Dual Bias Resistor Transistors
PNP Silico...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MUN5111DW1T1/D
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5111DW1T1 SERIES
Motorola Preferred Devices
6
5 4
1
2
3
CASE 419B–01, STYLE 1 SOT–363
(3)
(2) R1 R2
(1)
Q1 Q2 R2 (4) (5) R1 (6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating Collector–Base Voltage Collector–Emitter Voltage Collector Current
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Symbol VCBO VCEO IC
Value – 50 –50 –100
Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C(1) RθJA TJ, Tstg PD 833 – 65 to +150 *150 °C/W °C mW
DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES
De...