Document
MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon
3 2 1
6 5
4
1
4 5 6
2
3
SOT-363(SC-88)
PNP+PNP
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value -50 -50 -100 Unit Vdc Vdc mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range
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Symbol PD R θJA TJ,Tstg
Max 187 1.5 670 -55 to +150
Unit mW mW/ C C/W C
1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad
l
Device Marking and Resistor Values
Device
MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130
Marking
0A 0B 0C 0D 0E 0F 0G
R1(K)
10 22 47 10 10 4.7 1.0
R2(K)
10 22 47 47 8 8
Device
MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137
Marking
0H 0J 0K 0L 0M 0N 0P
R1(K)
2.2 4.7 4.7 22 2.2 100 47
R2(K)
2.2 4.7 47 47 47 100 22
1.0
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MUN5111DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
WE IT R ON
Symbol Min Typ Max Unit
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage (IC=-2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=-10 uA ,IE=0) Collector-Base Cutoff Voltage (VCB=-50 V, IE =0) Collector-Emitter Cutoff Current (ICE=-50V, IB =0) Emitter-Base Cutoff Current (VEB=-6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN5111DW MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW IEBO -50 -50 -100 -500 -0.5 -0.2 -0.1 -0.2 -0.9 -1.9 -4.3 -2.3 -1.5 -0.18 -0.13 -0.2 -0.05 -0.13 V V nA nA mA
On Characteristics
Collector-Emitter Saturation Voltage (IC =-10mA, IE =-0.3mA) (IC =-10mA, I B =--5mA) MUN5137DW/MUN5131DW (IC =-10mA, I B =--1mA) MUN5115DW/MUN5116DW MUN5132DW/MUN5133DW/MUN5134DW 3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% VCE(sat) -0.25 Vdc
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MUN5111DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
WE IT R ON
Symbol Min Typ Max Unit
Characteristics
On Characteristics (3)
DC Current Gain (VCE=-10V, IC =-5.0mA) MUN5111DW MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW MUN5111DW MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW h FE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 -4.9 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 Vdc
Output Voltage(on) (VCC=-5.0V, VB =-2.5V, RL =1.0k Ω )
VOL
(VCC =-5.0V, VB =-3.5V, R L =1.0k Ω ) (VCC=-5.0V, V B=-5.5V, R L=1.0k Ω ) (VCC=-5.0V, VB =-4.0V, R L =1.0k Ω )
Output Voltage(off ) (VCC =-5.0V, VB =-0.5V, R L =1.0k Ω ) (VCC =-5.0V, VB =-0.05V, RL =1.0k Ω ) MUN5130DW MUN5115DW (VCC =-5.0V, VB =-0.25V, RL =1.0k Ω ) MUN5116DW MUN5131DW MUN5133DW 3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% V V
VOH
Vdc
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MUN5111DW Series
Electrical Characteristics On Characteristics
Input Resistor MUN5111DW MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 0.8 0.055 0.38 0.038 1.7 (TA=25 C Unless Otherwise noted)
WE IT R ON
Symbol Min Typ Max Unit
Characteristics
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 1.0 0.1 0.47 0.047 2.1
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6
kΩ
Resistor Ratio MUN5111DW/MUN5112DW MUN5113DW/MUN5136DW MUN5114DW MUN5115DW/MUN5116DW MUN5130DW/MUN5131DW/MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5137DW 4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0 %
R1/R2
MUN5111DW1T1 Series
ALL MUN5111DW1T1 SERIES DEVICES
300 PD , P OWE R DIS S IPAT ION (mW) 250 200 150 100 50 0 - 50 R θJ A = 490 C /W 0 50 100 T A , AMB IE NT T E MP E R AT UR E ( 5C ) 150
FIG.1 Derating Curve - ALL DEVICES
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MUN5111DW Series
MUN5111DW Series
WE IT R ON
1000 VCE = 10 V
TYPICAL ELECTRICAL CHARACTERISTICS- MUN5111DW
VCE(sat), COLLECTOR VOLTAGE (VOLTS) IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1
TA = -25 C 0.1 75 C 25 C
TA = 75 C 25 C 100 -25 C
0.01 0
10 20 IC, COLLECTOR CURRENT (mA) 40 50
1
10 IC , COLLECTOR CURRENT (mA)
100
FIG.2 V CE(sat) versus I C
FIG.3 DC Current Gain
4 f = 1 MHz lE = 0 V TA = 25 C
100
75 C
25 C TA = -25 C
IC , COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
3
10
1
2
0.1
1
0.01 1 2
VO = 5 V 3 4 5 6 7 Vin , INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR , REVERSE BIAS VOLTAGE (VOLTS)
50
0.001 0
FIG.4 Output Capacitance
FIG.5 Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)
10
TA = -25 C 25 C 75 C
1
0.1 0
10
.