MUN5137

MUN5111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 BASE 1 R1 R2 3 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value 50 50 100 Unit Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Symbol PD Max 202 (1) 310 (2) 1.6 (1) 2.5 (2) 618 403 -55 to +150 Unit mW mW/ C C/W C www.DataSheet4U.com Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range R θJA TJ,Tstg 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad l Device Marking and Resistor Values Device MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 Marking 6A 6B 6C 6D 6E 6F 6G R1(K) 10 22 47 10 10 4.7 1.0 R2(K) 10 22 47 47 8 8 Device MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 Marking 6H 6J 6K 6L 6M 6N 6P R1(K) 2.2 4.7 4.7 22 2.2 100 47 R2(K) 2.2 4.7 47 47 47 100 22 1.0 WE ITR O N http://www.weitron.com.tw MUN5111 Series Electrical Characteristics (TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC=2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Base Cutoff Current (VCB=-50 V, IE =0) Collector-Emitter Cutoff Current (VCE=-50V, IB =0) Emitter-Base Cutoff Current (VEB=6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN5111 MUN5112 MU...