MSD42T1

MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount applications. Features http://onsemi.com COLLECTOR 3 Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 300 300 6.0 150 Unit Vdc Vdc Vdc mAdc 1 2 Symbol PD TJ Tstg Max 150 150 Unit mW °C °C SC−70 (SOT−323) CASE 419 (SCALE 2:1) 3 2 1 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range www.DataSheet4U.com SC−59 CASE 318D (SCALE 2:1) −55X+ 150 MARKING DIAGRAMS ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 1.0 mAdc) (VCE = 10 Vdc, IC = 30 mAdc) Collector-Emitter Saturation Voltage (Note 2) (IC = 20 mAdc, IB = 2.0 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 300 300 6.0 − − Max − − − 0.1 0.1 Unit Vdc Vdc Vdc mA mA − hFE1 hFE2 VCE(sat) 25 40 −...