MSC3930-BT1

MSC3930−BT1 Preferred Device NPN RF Amplifier Transistor Pb−Free Package is Available http://onsemi.com COLLECTOR 3 Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc mAdc 2 BASE 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 −55 ~ +150 Unit mW °C °C 1 2 1 EMITTER MARKING DIAGRAM VB MG G 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not www.DataSheet4U.com normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. SOT−323/SC−70 CASE 419 STYLE 3 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector−Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current (VCB = 10 Vdc, IC = −1.0 mAdc) Collector−Gain — Bandwidth Product (VCB = 10 Vdc, IE = −1.0 mAdc) Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz) Gain(1) Symbol ICBO hFE 70 fT 150 140 — MHz Min — Max 0.1 Unit μAdc — VB = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MSC3930−BT1 MSC3930−BT1G Package SC−70 SC−70 (Pb−Free) Shipping† 3000/Tape & ...