MPSA62 MPSA65 MPSA63 MPSA66 MPSA64
SILICON PNP DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION:...
MPSA62 MPSA65 MPSA63 MPSA66 MPSA64
SILICON
PNP DARLINGTON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon
PNP Darlington
transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCES VEBO IC PD TJ, Tstg JA
MPSA63 MPSA65 UNITS MPSA62 MPSA64 MPSA66
20 30 30 20 30 30 10 10 8.0
500 625 -65 to +150 200
UNITS V V V mA
mW °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) MPSA62 MPSA63 MPSA64 MPSA65
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX
ICBO
VCB=15V
- 100 - -
-- --
ICBO
VCB=30V
--
- 100 - 100 - 100
IEBO
VEB=10V
- 100 - 100 - 100 - -
IEBO
VEB=8.0V
--
--
- - - 100
BVCES IC=100μA
20 - 30 - 30 - 30 -
VCE(SAT) IC=10mA, IB=10μA
- 1.0 - -
-- --
VCE(SAT) IC=100mA, IB=0.1mA
--
- 1.5 - 1.5 - 1.5
VBE(ON) VCE=5.0V, IB=10mA
- 1.4 - -
-- --
VBE(ON) VCE=5.0V, IB=100mA
--
- 2.0 - 2.0 - 2.0
hFE VCE=5.0V, IC=10mA
20K - 5K - 10K - 50K -
hFE VCE=5.0V, IC=100mA
- - 10K - 20K - 20K -
fT VCE=5.0V, IC=100mA, f=100MHz - - 125 - 125 - - -
fT
VCE=10V, IC=30mA, f=50MHz
--
--
- - 100 -
Cob VCB=10V, IE=0, f=100kHz 2.5 (TYP) 2.5 (TYP) 2.5 (TYP) 2.5...