MPSA62

MPSA62 MPSA65 MPSA63 MPSA66 MPSA64 SILICON PNP DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD TJ, Tstg JA MPSA63 MPSA65 UNITS MPSA62 MPSA64 MPSA66 20 30 30 20 30 30 10 10 8.0 500 625 -65 to +150 200 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) MPSA62 MPSA63 MPSA64 MPSA65 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX ICBO VCB=15V - 100 - - -- -- ICBO VCB=30V -- - 100 - 100 - 100 IEBO VEB=10V - 100 - 100 - 100 - - IEBO VEB=8.0V -- -- - - - 100 BVCES IC=100μA 20 - 30 - 30 - 30 - VCE(SAT) IC=10mA, IB=10μA - 1.0 - - -- -- VCE(SAT) IC=100mA, IB=0.1mA -- - 1.5 - 1.5 - 1.5 VBE(ON) VCE=5.0V, IB=10mA - 1.4 - - -- -- VBE(ON) VCE=5.0V, IB=100mA -- - 2.0 - 2.0 - 2.0 hFE VCE=5.0V, IC=10mA 20K - 5K - 10K - 50K - hFE VCE=5.0V, IC=100mA - - 10K - 20K - 20K - fT VCE=5.0V, IC=100mA, f=100MHz - - 125 - 125 - - - fT VCE=10V, IC=30mA, f=50MHz -- -- - - 100 - Cob VCB=10V, IE=0, f=100kHz 2.5 (TYP) 2.5 (TYP) 2.5 (TYP) 2.5...